Infineon 16kbit I2C FRAM Memory 8-Pin SOIC, FM24CL16B-G
- RS-artikelnummer:
- 188-5400
- Tillv. art.nr:
- FM24CL16B-G
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 97 enheter)*
1 283,698 kr
(exkl. moms)
1 604,574 kr
(inkl. moms)
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- Dessutom levereras 194 enhet(er) från den 22 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 97 - 97 | 13,234 kr | 1 283,70 kr |
| 194 - 485 | 11,884 kr | 1 152,75 kr |
| 582 - 970 | 11,566 kr | 1 121,90 kr |
| 1067 + | 11,245 kr | 1 090,77 kr |
*vägledande pris
- RS-artikelnummer:
- 188-5400
- Tillv. art.nr:
- FM24CL16B-G
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 bit | |
| Interface Type | I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Width | 3.98mm | |
| Maximum Operating Supply Voltage | 3.65 V | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 2k | |
| Automotive Standard | AEC-Q100 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 bit | ||
Interface Type I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Width 3.98mm | ||
Maximum Operating Supply Voltage 3.65 V | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 2k | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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