Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-G
- RS-artikelnummer:
- 273-7384
- Tillv. art.nr:
- FM25C160B-G
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 97 enheter)*
2 089,865 kr
(exkl. moms)
2 612,307 kr
(inkl. moms)
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- 1 843 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 97 - 97 | 21,545 kr | 2 089,87 kr |
| 194 + | 18,817 kr | 1 825,25 kr |
*vägledande pris
- RS-artikelnummer:
- 273-7384
- Tillv. art.nr:
- FM25C160B-G
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Package Type SOIC | ||
Pin Count 8 | ||
- COO (Country of Origin):
- TH
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
AEC Q100 Grade 1 compliant
Very fast serial peripheral interface
Sophisticated write protection scheme
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
Low power consumption
AEC Q100 Grade 1 compliant
Very fast serial peripheral interface
Sophisticated write protection scheme
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
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