Infineon, CFI, NOR 16 MB Flash-minne, 70 ns, 48 Ben, TSOP

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Förpackningsalternativ:
RS-artikelnummer:
193-8787
Tillv. art.nr:
S29AL016J70TFI013
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

Flash-minne

Minnesstorlek

16MB

Gränssnittstyp

CFI,

Kapseltyp

TSOP

Antal ben

48

Typ av fäste

Yta

Celltyp

NOR

Minsta matningsspänning

2.7V

Maximal matningsspänning

3.6V

Tidsinställningstyp

Asynkron

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

85°C

Standarder/godkännanden

No

Höjd

1.05mm

Längd

12mm

Serie

S29AL016J

Antal ord

2M

Antal bitar per ord

8

Maximal slumpmässig åtkomsttid

70ns

Matningsström

12mA

Fordonsstandard

AEC-Q100

COO (ursprungsland):
TH
The S29AL016J is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch), 64-ball Fortified BGA (1.0 mm pitch) and 48pin TSOP packages. The word-wide data (x16)appears on DQ15–DQ0, the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

The device offers access time of 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7(Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command.

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