Infineon NOR 512 MB SPI Flash Memory 8-Pin, S25HL512TFAMHI010
- RS-artikelnummer:
- 273-5425
- Tillv. art.nr:
- S25HL512TFAMHI010
- Tillverkare / varumärke:
- Infineon
Antal (1 fack med 240 enheter)*
20 458,08 kr
(exkl. moms)
25 572,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Bricka* |
|---|---|---|
| 240 + | 85,242 kr | 20 458,08 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5425
- Tillv. art.nr:
- S25HL512TFAMHI010
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 512MB | |
| Product Type | Flash Memory | |
| Interface Type | SPI | |
| Pin Count | 8 | |
| Maximum Clock Frequency | 166MHz | |
| Cell Type | NOR | |
| Minimum Supply Voltage | 1.7V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Standards/Approvals | ISO26262 ASIL B and ASIL D ready | |
| Automotive Standard | AEC-Q1 Grade 1 | |
| Supply Current | 53mA | |
| Series | SEMPER Flash | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 512MB | ||
Product Type Flash Memory | ||
Interface Type SPI | ||
Pin Count 8 | ||
Maximum Clock Frequency 166MHz | ||
Cell Type NOR | ||
Minimum Supply Voltage 1.7V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Standards/Approvals ISO26262 ASIL B and ASIL D ready | ||
Automotive Standard AEC-Q1 Grade 1 | ||
Supply Current 53mA | ||
Series SEMPER Flash | ||
The Infineon Flash Memory is a Quad SPI family of products which has high speed CMOS, MIRRORBIT™ NOR Flash devices. This flash memory is designed for functional safety with development according to ISO 26262 standard to achieve ASIL B compliance and ASIL D readiness. Read operations from the device are burst oriented. Read transactions can be configured to use either a wrapped or linear burst. Wrapped bursts read from a single page whereas linear bursts can read the whole memory array.
Legacy Block protection
SDR option runs up to 21 MBps
OTP secure silicon array of 1024 bytes
Serial flash discoverable parameters
Minimum 100000 program and erase cycles
relaterade länkar
- Infineon NOR 512 MB SPI Flash Memory 8-Pin, S25HL512TFAMHI010
- Infineon NOR 512 MB SPI Flash Memory 64-Pin, S25FL512SAGBHIA13
- Infineon NOR 512 MB SPI Flash Memory 64-Pin, S25FL512SAGBHI210
- Infineon NOR 512 MB SPI Flash Memory 16-Pin, S25FL512SAGMFIG13
- Infineon NOR 512 MB SPI Flash Memory 16-Pin, S25FL512SAGMFI013
- Infineon NOR 512 MB SPI Flash Memory 16-Pin, S25FL512SAGMFMR10
- Infineon NOR 512 MB SPI Flash Memory 64-Pin, S25FL512SAGBHIC13
- Infineon NOR 512 MB SPI Flash Memory 16-Pin, S25FL512SAGMFI010
