Microchip 25LC512-E/SM, 512kB Serial EEPROM Memory, 50ns 8-Pin SOIJ Serial-SPI
- RS-artikelnummer:
- 823-7651
- Tillv. art.nr:
- 25LC512-E/SM
- Tillverkare / varumärke:
- Microchip
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- RS-artikelnummer:
- 823-7651
- Tillv. art.nr:
- 25LC512-E/SM
- Tillverkare / varumärke:
- Microchip
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Produktdetaljer
- COO (ursprungsland):
- TH
25AA512/25LC512 SPI Serial EEPROM
Microchips 25AA512/25LC512 family of devices are 32 Kbit SPI Serial EEPROMs available in a variety of package, temperature and power supply variants. Featured are Page, Sector and Chip Erase functions typically associated with Flash based products.
The Serial Peripheral Interface (SPI) is utilised to provide the required Clock Input (SCK), Data In (SI) and Data Out (SO) signals. The operation of these devices can be paused via a Hold pin (HOLD) which causes inputs to be ignored with the exception higher priority interrupts defined via the Chip Select (CS) pin.
The Serial Peripheral Interface (SPI) is utilised to provide the required Clock Input (SCK), Data In (SI) and Data Out (SO) signals. The operation of these devices can be paused via a Hold pin (HOLD) which causes inputs to be ignored with the exception higher priority interrupts defined via the Chip Select (CS) pin.
Features
20 MHz maximum Clock Speed
Byte and Page-level Write Operations (5 ms maximum): No page or sector erase required
128-byte Page
Maximum Write Current: 5 mA at 5.5V, 20 MHz
Read Current: 10 mA at 5.5V, 20 MHz
Standby Current: 1μA at 2.5V (Deep power-down)
Electronic Signature for Device ID
Self-Timed Erase and Write Cycles: Page Erase (5 ms typical), Sector Erase (10 ms/sector, typical) and Bulk Erase (10 ms, typical)
Sector Write Protection (16K byte/sector): Protect none, 1/4, 1/2 or all of array
Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch Write-protect pin
Endurance: 1 Million erase/write cycles
Data Retention: >200 years
ESD Protection: >4000V
Byte and Page-level Write Operations (5 ms maximum): No page or sector erase required
128-byte Page
Maximum Write Current: 5 mA at 5.5V, 20 MHz
Read Current: 10 mA at 5.5V, 20 MHz
Standby Current: 1μA at 2.5V (Deep power-down)
Electronic Signature for Device ID
Self-Timed Erase and Write Cycles: Page Erase (5 ms typical), Sector Erase (10 ms/sector, typical) and Bulk Erase (10 ms, typical)
Sector Write Protection (16K byte/sector): Protect none, 1/4, 1/2 or all of array
Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch Write-protect pin
Endurance: 1 Million erase/write cycles
Data Retention: >200 years
ESD Protection: >4000V
EEPROM Serial Access - Microchip
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