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Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1

RS-artikelnummer:: 110-7168
Tillv. art.nr:: IDP30E120XKSA1
Tillverkare / varumärke:: Infineon

Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

186,82 kr

(exkl. moms)

233,52 kr

(inkl. moms)

Lägg till 50 enheter för att få fri frakt

Beställningar under 500,00 kr (exkl. moms) kostar 119,00 kr.

Tillfälligt slut

Leverans från den 24 juni 2026

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Enheter	Per enhet	Per förpackning*
10 - 10	18,682 kr	186,82 kr
20 - 90	11,547 kr	115,47 kr
100 - 190	11,245 kr	112,45 kr
200 - 490	10,965 kr	109,65 kr
500 +	10,685 kr	106,85 kr

*vägledande pris

RS-artikelnummer:: 110-7168
Tillv. art.nr:: IDP30E120XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	Silicon Junction
	Diode Configuration	Single
	Maximum Forward Current If	30A
	Mount Type	Through Hole
	Sub Type	Silicon Junction
	Package Type	TO-220
	Pin Count	2
	Maximum Forward Voltage Vf	2.15V
	Peak Non-Repetitive Forward Surge Current Ifsm	102A
	Peak Reverse Recovery Time trr	380ns
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	138W
	Maximum Peak Reverse Repetitive Voltage Vrrm	1200V
	Maximum Operating Temperature	150°C
	Width	4.5 mm
	Standards/Approvals	No
	Height	15.95mm
	Length	10.2mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type Silicon Junction
	Diode Configuration Single
	Maximum Forward Current If 30A
	Mount Type Through Hole
	Sub Type Silicon Junction
	Package Type TO-220
	Pin Count 2
	Maximum Forward Voltage Vf 2.15V
	Peak Non-Repetitive Forward Surge Current Ifsm 102A
	Peak Reverse Recovery Time trr 380ns
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 138W
	Maximum Peak Reverse Repetitive Voltage Vrrm 1200V
	Maximum Operating Temperature 150°C
	Width 4.5 mm
	Standards/Approvals No
	Height 15.95mm
	Length 10.2mm
	Automotive Standard No

Fast Switching Emitter Controlled Diodes, Infineon

The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.

Rapid 1 diode switches between 18kHz and 40kHz

1.35V temperature-stable forward voltage

Ideal for Power Factor Correction (PFC) topologies

The Rapid 2 diode switches between 40 kHz and 100 kHz

Low reverse recovery charge: forward voltage ratio for BiC performance

Low reverse recovery time

Low turn-on losses on the boost switch

Ultra-fast Diode 600 V/1200 V Emitter Controlled technology

Qualified according to JEDEC Standard

Good EMI behaviour

Low conduction losses

Easy paralleling

Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1

Lägg till 50 enheter för att få fri frakt

Fast Switching Emitter Controlled Diodes, Infineon

Diodes and Rectifiers, Infineon

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