Infineon SRAM, CY62148ELL-55SXI- 4Mbit
- RS-artikelnummer:
- 124-2941P
- Tillv. art.nr:
- CY62148ELL-55SXI
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal 10 enheter (levereras i ett rör)*
881,45 kr
(exkl. moms)
1 101,81 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 134 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 10 - 18 | 88,145 kr |
| 20 - 98 | 85,79 kr |
| 100 - 498 | 83,44 kr |
| 500 + | 81,48 kr |
*vägledande pris
- RS-artikelnummer:
- 124-2941P
- Tillv. art.nr:
- CY62148ELL-55SXI
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512k x 8 bit | |
| Number of Words | 512k | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 45ns | |
| Address Bus Width | 8bit | |
| Clock Frequency | 1MHz | |
| Low Power | Yes | |
| Timing Type | Asynchronous | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 32 | |
| Dimensions | 20.75 x 11.43 x 2.81mm | |
| Height | 2.81mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Temperature | -40 °C | |
| Length | 20.75mm | |
| Width | 11.43mm | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 512k x 8 bit | ||
Number of Words 512k | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 45ns | ||
Address Bus Width 8bit | ||
Clock Frequency 1MHz | ||
Low Power Yes | ||
Timing Type Asynchronous | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 32 | ||
Dimensions 20.75 x 11.43 x 2.81mm | ||
Height 2.81mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Temperature -40 °C | ||
Length 20.75mm | ||
Width 11.43mm | ||
Minimum Operating Supply Voltage 4.5 V | ||
- COO (Country of Origin):
- US
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
Very high speed: 45 ns
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62148B
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA (Industrial)
Ultra low active power
Typical active current: 2.0 mA at f = 1 MHz
Easy memory expansion with CE, and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC)[1] packages
SRAM (Static Random Access Memory)