Vishay 650 V 12 A Rectifier & Schottky Diode SiC Schottky 3-Pin D2PAK VS-3C12ET07S2L-M3
- RS-artikelnummer:
- 279-9463
- Tillv. art.nr:
- VS-3C12ET07S2L-M3
- Tillverkare / varumärke:
- Vishay
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47,71 kr
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59,64 kr
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Enheter | Per enhet |
|---|---|
| 1 - 24 | 47,71 kr |
| 25 - 49 | 39,20 kr |
| 50 - 99 | 35,17 kr |
| 100 - 249 | 34,27 kr |
| 250 + | 33,49 kr |
*vägledande pris
- RS-artikelnummer:
- 279-9463
- Tillv. art.nr:
- VS-3C12ET07S2L-M3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | eSMP | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 1.85V | |
| Peak Reverse Current Ir | 65μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 83A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 11.3 mm | |
| Standards/Approvals | UL, RoHS | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series eSMP | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 1.85V | ||
Peak Reverse Current Ir 65μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 83A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 11.3 mm | ||
Standards/Approvals UL, RoHS | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
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