STMicroelectronics 1200 V 20 A Diode Schottky 3-Pin TO-247
- RS-artikelnummer:
- 201-0871P
- Tillv. art.nr:
- STPSC40H12CWL
- Tillverkare / varumärke:
- STMicroelectronics
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Enheter | Per enhet |
|---|---|
| 5 - 9 | 170,46 kr |
| 10 - 24 | 165,98 kr |
| 25 - 49 | 161,50 kr |
| 50 + | 157,47 kr |
*vägledande pris
- RS-artikelnummer:
- 201-0871P
- Tillv. art.nr:
- STPSC40H12CWL
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPSC40H12C | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 60μA | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 700A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.9mm | |
| Width | 15.77 mm | |
| Diameter | 3.55 mm | |
| Length | 40.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPSC40H12C | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 60μA | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 700A | ||
Maximum Operating Temperature 175°C | ||
Height 4.9mm | ||
Width 15.77 mm | ||
Diameter 3.55 mm | ||
Length 40.87mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its high forward surge capability.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C