onsemi 650 V 10.1 A Diode Schottky 3-Pin D2PAK FFSB0865B
- RS-artikelnummer:
- 194-5745
- Tillv. art.nr:
- FFSB0865B
- Tillverkare / varumärke:
- onsemi
Antal (1 förpackning med 5 enheter)*
43,78 kr
(exkl. moms)
54,725 kr
(inkl. moms)
Lägg till 60 enheter för att få fri frakt
Sista RS lager
- Slutlig(a) 1 565 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 + | 8,756 kr | 43,78 kr |
*vägledande pris
- RS-artikelnummer:
- 194-5745
- Tillv. art.nr:
- FFSB0865B
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10.1A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 577A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10.1A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 577A | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
Relaterade länkar
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK FFSB0865B-F085
- onsemi 650 V 10.1 A Diode Schottky 3-Pin D2PAK
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin D2PAK
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220
- onsemi 650 V 73 A Schottky Diode Schottky 3-Pin D2PAK
- onsemi 650 V 27 A Schottky Diode Schottky 3-Pin D2PAK
- onsemi 650 V 10.1 A Schottky Diode Schottky 2-Pin TO-220 FFSP0865B
- onsemi 650 V 8 A Diode Schottky 3-Pin D2PAK