STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- RS-artikelnummer:
- 719-662
- Tillv. art.nr:
- STPSC30G065L2Y
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rulle med 600 enheter)*
31 595,40 kr
(exkl. moms)
39 494,40 kr
(inkl. moms)
Lägg till 600 enheter för att få fri frakt
Tillfälligt slut
- Leverans från den 02 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 600 + | 52,659 kr | 31 595,40 kr |
*vägledande pris
- RS-artikelnummer:
- 719-662
- Tillv. art.nr:
- STPSC30G065L2Y
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 7 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 1200μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Maximum Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.6mm | |
| Length | 11.9mm | |
| Width | 14.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Schottky Diode | ||
Mount Type Through Hole | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 7 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 1200μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Maximum Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 3.6mm | ||
Length 11.9mm | ||
Width 14.1 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
AEC-Q101 qualified and PPAP capable
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge current capability
ECOPACK2 compliant component
SMD with TOP side cooling package