onsemi 650 V 10 A Diode 2-Pin TO-247-2LD FFSH1065B-F155
- RS-artikelnummer:
- 277-069
- Tillv. art.nr:
- FFSH1065B-F155
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
102,14 kr
(exkl. moms)
127,675 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 07 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 20,428 kr | 102,14 kr |
| 50 - 95 | 19,398 kr | 96,99 kr |
| 100 - 495 | 17,964 kr | 89,82 kr |
| 500 - 995 | 16,554 kr | 82,77 kr |
| 1000 + | 15,948 kr | 79,74 kr |
*vägledande pris
- RS-artikelnummer:
- 277-069
- Tillv. art.nr:
- FFSH1065B-F155
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2LD | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | FFSH | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2LD | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series FFSH | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.
Max junction temperature 175°C
Avalanche rated 51 mJ
High surge current capacity
Positive temperature coefficient
Ease of paralleling
Relaterade länkar
- onsemi 650 V 50 A Diode 2-Pin TO-247-2LD FFSH5065B-F155
- onsemi 650 V 20 A Diode 2-Pin TO-247-2LD FFSH2065B-F155
- onsemi 1200 V 12 A Diode 2-Pin TO-247-2LD NDSH10120C-F155
- onsemi 1200 V 26 A Diode 2-Pin TO-247-2LD NDSH20120C-F155
- onsemi 1200 V 50 A Diode 2-Pin TO-247-2LD NDSH50120C-F155
- onsemi 1200 V 38 A Diode 2-Pin TO-247-2LD NDSH30120C-F155
- onsemi 1200 V 46 A Diode 2-Pin TO-247-2LD NDSH40120C-F155
- onsemi 650 V 10 A Diode Schottky 2-Pin TO-247 FFSH1065B-F085
