Toshiba 650V 10A, Schottky Diode, 2-Pin TO-220 TRS10E65C,S1AQ(S
- RS-artikelnummer:
- 896-2606
- Tillv. art.nr:
- TRS10E65C,S1AQ(S
- Tillverkare / varumärke:
- Toshiba
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Lagt till varukorgen
Pris (ex. moms) Varje
80,65 kr
(exkl. moms)
100,81 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 9 | 80,65 kr |
| 10 - 49 | 70,93 kr |
| 50 - 99 | 68,97 kr |
| 100 - 199 | 67,21 kr |
| 200 + | 65,66 kr |
- RS-artikelnummer:
- 896-2606
- Tillv. art.nr:
- TRS10E65C,S1AQ(S
- Tillverkare / varumärke:
- Toshiba
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
Specifikationer
Attribute | Value |
|---|---|
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Maximum Continuous Forward Current | 10A |
| Peak Reverse Repetitive Voltage | 650V |
| Diode Configuration | Single |
| Diode Type | Schottky |
| Pin Count | 2 |
| Maximum Forward Voltage Drop | 1.7V |
| Number of Elements per Chip | 1 |
| Diode Technology | SiC Schottky |
| Peak Non-Repetitive Forward Surge Current | 50A |
- RS-artikelnummer:
- 896-2606
- Tillv. art.nr:
- TRS10E65C,S1AQ(S
- Tillverkare / varumärke:
- Toshiba