onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin SOIC FDS9945
- RS-artikelnummer:
- 917-5500
- Tillv. art.nr:
- FDS9945
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
168,90 kr
(exkl. moms)
211,125 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 700 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 75 | 6,756 kr | 168,90 kr |
| 100 - 475 | 4,888 kr | 122,20 kr |
| 500 - 975 | 4,077 kr | 101,93 kr |
| 1000 - 2475 | 3,472 kr | 86,80 kr |
| 2500 + | 3,10 kr | 77,50 kr |
*vägledande pris
- RS-artikelnummer:
- 917-5500
- Tillv. art.nr:
- FDS9945
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Isolated | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Isolated | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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