IXYS X2-Class Type N-Channel MOSFET, 120 A, 650 V Enhancement, 3-Pin PLUS247 IXTX120N65X2
- RS-artikelnummer:
- 917-1448
- Distrelec artikelnummer:
- 302-53-434
- Tillv. art.nr:
- IXTX120N65X2
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
166,83 kr
(exkl. moms)
208,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 10 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 166,83 kr |
| 5 - 9 | 156,65 kr |
| 10 - 29 | 148,98 kr |
| 30 - 59 | 138,80 kr |
| 60 + | 131,80 kr |
*vägledande pris
- RS-artikelnummer:
- 917-1448
- Distrelec artikelnummer:
- 302-53-434
- Tillv. art.nr:
- IXTX120N65X2
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | X2-Class | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1.25kW | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Width | 21.34 mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253434 | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series X2-Class | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1.25kW | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Width 21.34 mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253434 | ||
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
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