Hex SiC N-Channel MOSFET, 87 A, 1200 V, 28-Pin Six Pack Wolfspeed CCS050M12CM2

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RS-artikelnummer:
916-3891
Tillv. art.nr:
CCS050M12CM2
Tillverkare / varumärke:
Wolfspeed
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Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

87 A

Maximum Drain Source Voltage

1200 V

Package Type

Six Pack

Mounting Type

Screw Mount

Pin Count

28

Maximum Drain Source Resistance

63 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

312 W

Transistor Configuration

3 Phase

Maximum Gate Source Voltage

-10 V, +25 V

Typical Gate Charge @ Vgs

180 nC @ 10 V

Length

108mm

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Number of Elements per Chip

6

Width

47mm

Forward Diode Voltage

2.3V

Height

17mm

Wolfspeed Silicon Carbide Power MOSFET Modules


Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements


MOSFET Transistors, Wolfspeed