IRLB8721PBF N-Channel MOSFET, 62 A, 30 V HEXFET, 3-Pin TO-220AB Infineon

  • RS-artikelnummer 913-4036
  • Tillv. art.nr IRLB8721PBF
  • Tillverkare / varumärke Infineon
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): MX
Produktdetaljer

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifikationer
Attribute Value
Channel Type N
Maximum Continuous Drain Current 62 A
Maximum Drain Source Voltage 30 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 9 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.35V
Minimum Gate Threshold Voltage 1.35V
Maximum Power Dissipation 65 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 10.67mm
Maximum Operating Temperature +175 °C
Series HEXFET
Height 9.02mm
Transistor Material Si
Width 4.83mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 7.6 nC @ 4.5 V
700 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Tube of 50)
6,742 kr
(exkl. moms)
8,428 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
50 - 200
6,742 kr
337,10 kr
250 - 950
5,147 kr
257,35 kr
1000 - 2450
3,892 kr
194,60 kr
2500 +
3,791 kr
189,55 kr
Related Products
TrenchFET® Gen IV power MOSFETHigh side and low ...
Description:
TrenchFET® Gen IV power MOSFETHigh side and low side MOSFETs form optimizedcombination for 50 % duty cycleOptimized RDS - Qg and RDS - Qgd FOM elevatesefficiency for high frequency switchingAPPLICATIONSSynchronous buckDC/DC conversionHalf bridgePOL.
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...