Infineon SIPMOS Type N-Channel MOSFET, 2.6 A, 60 V Enhancement, 4-Pin SOT-223

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RS-artikelnummer:
911-4978
Tillv. art.nr:
BSP318SH6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.8W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.5mm

Width

3.5 mm

Height

1.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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