Toshiba TK N-Channel MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32E12N1,S1X(S
- RS-artikelnummer:
- 896-2347P
- Tillv. art.nr:
- TK32E12N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal 50 enheter (levereras i en påse)*
224,10 kr
(exkl. moms)
280,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet |
|---|---|
| 50 - 95 | 4,482 kr |
| 100 - 245 | 4,082 kr |
| 250 - 495 | 3,85 kr |
| 500 + | 3,556 kr |
*vägledande pris
- RS-artikelnummer:
- 896-2347P
- Tillv. art.nr:
- TK32E12N1,S1X(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 120 V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 98 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.45mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.16mm | |
| Number of Elements per Chip | 1 | |
| Height | 15.1mm | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 120 V | ||
Series TK | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 98 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.45mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.16mm | ||
Number of Elements per Chip 1 | ||
Height 15.1mm | ||
- COO (Country of Origin):
- CN