Toshiba TK N-Channel MOSFET, 34 A, 100 V, 3-Pin TO-220SIS TK34A10N1,S4X(S
- RS-artikelnummer:
- 896-2341P
- Tillv. art.nr:
- TK34A10N1,S4X(S
- Tillverkare / varumärke:
- Toshiba
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- RS-artikelnummer:
- 896-2341P
- Tillv. art.nr:
- TK34A10N1,S4X(S
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TK | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.5mm | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Height | 15mm | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 100 V | ||
Series TK | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Width 4.5mm | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Height 15mm | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba