N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 Infineon BF998E6327HTSA1

RS-artikelnummer:: 892-2295P
Tillv. art.nr:: BF998E6327HTSA1
Tillverkare / varumärke:: Infineon

N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 Infineon BF998E6327HTSA1

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RS-artikelnummer:: 892-2295P
Tillv. art.nr:: BF998E6327HTSA1
Tillverkare / varumärke:: Infineon

BF998, Silicon N-Channel MOSFET Tetrode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 mA
Maximum Drain Source Voltage	12 V
Package Type	SOT-143
Series	BF998
Mounting Type	Surface Mount
Pin Count	4
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	0.8V
Maximum Power Dissipation	200 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-2.5 V, -2 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	2.9mm
Width	1mm
Typical Power Gain	28 dB
Height	1.3mm

N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 Infineon BF998E6327HTSA1

Infineon Dual-gate MOSFET Tetrode