Infineon BF998 N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 BF998E6327HTSA1

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RS-artikelnummer:
892-2295
Tillv. art.nr:
BF998E6327HTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 mA

Maximum Drain Source Voltage

12 V

Package Type

SOT-143

Series

BF998

Mounting Type

Surface Mount

Pin Count

4

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-2.5 V, -2 V

Length

2.9mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1mm

Transistor Material

Si

Height

1.3mm

Typical Power Gain

28 dB

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.