Toshiba TK Type N-Channel MOSFET, 11.1 A, 650 V Enhancement, 3-Pin TO-220 TK11A65W,S5X(M
- RS-artikelnummer:
- 891-2875
- Tillv. art.nr:
- TK11A65W,S5X(M
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
70,90 kr
(exkl. moms)
88,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Lagerinformation är för närvarande otillgänglig
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 14,18 kr | 70,90 kr |
| 25 - 45 | 9,162 kr | 45,81 kr |
| 50 - 95 | 8,916 kr | 44,58 kr |
| 100 - 245 | 8,714 kr | 43,57 kr |
| 250 + | 8,49 kr | 42,45 kr |
*vägledande pris
- RS-artikelnummer:
- 891-2875
- Tillv. art.nr:
- TK11A65W,S5X(M
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.1A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 390mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 35W | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 15mm | |
| Length | 10mm | |
| Width | 4.5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.1A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 390mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 35W | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Height 15mm | ||
Length 10mm | ||
Width 4.5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET Transistors, Toshiba
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