onsemi UltraFET Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PQFN-8

Antal (1 rulle med 3000 enheter)*

36 090,00 kr

(exkl. moms)

45 120,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Försörjningsbrist
På grund av begränsningar i försörjningskedjan tilldelas lager allt eftersom det blir tillgängligt.
Enheter
Per enhet
Per rulle*
3000 +12,03 kr36 090,00 kr

*vägledande pris

RS-artikelnummer:
864-4986
Tillv. art.nr:
FDMS2572
Tillverkare / varumärke:
onsemi
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

150V

Series

UltraFET

Package Type

PQFN-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

103mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Typical Gate Charge Qg @ Vgs

31nC

Maximum Operating Temperature

150°C

Height

0.75mm

Width

6 mm

Length

5mm

Standards/Approvals

No

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

relaterade länkar