onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

RS-artikelnummer:: 864-4948
Tillv. art.nr:: FQD7P20TM
Tillverkare / varumärke:: onsemi

onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252

Mängdrabatt möjlig

Antal (1 rulle med 2500 enheter)*

12 460,00 kr

(exkl. moms)

15 575,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Försörjningsbrist

2 500 kvar, redo att levereras

Vårt nuvarande lager är begränsat och våra leverantörer förväntar sig brist.

Enheter	Per enhet	Per rulle*
2500 - 10000	4,984 kr	12 460,00 kr
12500 - 22500	4,819 kr	12 047,50 kr
25000 +	4,695 kr	11 737,50 kr

*vägledande pris

RS-artikelnummer:: 864-4948
Tillv. art.nr:: FQD7P20TM
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	200V
	Series	FQD7P20TM
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	690mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	2.5W
	Typical Gate Charge Qg @ Vgs	19nC
	Forward Voltage Vf	-5V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	6.1 mm
	Standards/Approvals	No
	Height	2.3mm
	Length	6.6mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 200V
	Series FQD7P20TM
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 690mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 2.5W
	Typical Gate Charge Qg @ Vgs 19nC
	Forward Voltage Vf -5V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 6.1 mm
	Standards/Approvals No
	Height 2.3mm
	Length 6.6mm
	Automotive Standard No

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.