N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

RS-artikelnummer:: 827-6182
Tillv. art.nr:: TK31E60W,S1VX(S
Tillverkare / varumärke:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

12 I lager för avsändande samma dag

Pris (ex. moms) Var (i ett paket med 2)

55,005 kr

(exkl. moms)

68,756 kr

(inkl. moms)

Enheter	Per enhet	Per förpackning*
2 - 8	55,005 kr	110,01 kr
10 - 18	48,465 kr	96,93 kr
20 - 48	42,255 kr	84,51 kr
50 - 98	39,535 kr	79,07 kr
100 +	37,815 kr	75,63 kr

RS-artikelnummer:: 827-6182
Tillv. art.nr:: TK31E60W,S1VX(S
Tillverkare / varumärke:: Toshiba

TK31E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Series	TK
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.45mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	86 nC @ 10 V
Length	10.16mm
Number of Elements per Chip	1
Height	15.1mm

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

MOSFET N-Channel, TK3x Series, Toshiba