N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 Toshiba TK20E60W,S1VX(S

RS-artikelnummer:: 827-6160P
Tillv. art.nr:: TK20E60W,S1VX(S
Tillverkare / varumärke:: Toshiba

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 Toshiba TK20E60W,S1VX(S

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RS-artikelnummer:: 827-6160P
Tillv. art.nr:: TK20E60W,S1VX(S
Tillverkare / varumärke:: Toshiba

TK20E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	155 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	165 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	48 nC @ 10 V
Length	10.16mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Width	4.45mm
Height	15.1mm

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 Toshiba TK20E60W,S1VX(S

MOSFET N-Channel, TK2x Series, Toshiba