Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252
- RS-artikelnummer:
- 827-4060P
- Tillv. art.nr:
- IRFR5305TRPBF
- Tillverkare / varumärke:
- Infineon
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Enheter | Per enhet |
|---|---|
| 100 - 180 | 7,773 kr |
| 200 - 480 | 7,459 kr |
| 500 - 980 | 6,955 kr |
| 1000 + | 6,541 kr |
*vägledande pris
- RS-artikelnummer:
- 827-4060P
- Tillv. art.nr:
- IRFR5305TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Distrelec Product Id | 304-44-464 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Distrelec Product Id 304-44-464 | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF
This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.
Features & Benefits
• Achieves low on-resistance for enhanced efficiency
• Supports a maximum continuous drain current of 31A
• Designed for ease of use in surface mount applications
• Capable of operating within a temperature range of -55°C to +175°C
• Facilitates quick switching speeds for improved performance
• Allows a maximum power dissipation of 110W for diverse applications
Applications
• Utilised in power management systems
• Suitable for motor control
• Employed in switching power supplies for electronic devices
• Used in automotive circuits for improved efficiency
What are the recommended soldering techniques for installation?
Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.
Can it handle high temperature environments?
Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.
What is the significance of low RDS(on)?
Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.
How do I ensure accurate switching behaviour?
Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.
Is this compatible with standard PCB layouts?
Yes, it is designed in DPAK packaging, enabling straightforward integration into typical PCB designs without the need for special modifications.