Infineon HEXFET Type N-Channel MOSFET, 43 A, 200 V Enhancement, 3-Pin TO-220 IRFB38N20DPBF
- RS-artikelnummer:
- 827-3944
- Tillv. art.nr:
- IRFB38N20DPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
146,51 kr
(exkl. moms)
183,14 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 50 enhet(er) är redo att levereras
- Dessutom levereras 20 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 29,302 kr | 146,51 kr |
| 50 - 120 | 27,82 kr | 139,10 kr |
| 125 - 245 | 26,656 kr | 133,28 kr |
| 250 - 495 | 24,908 kr | 124,54 kr |
| 500 + | 23,43 kr | 117,15 kr |
*vägledande pris
- RS-artikelnummer:
- 827-3944
- Tillv. art.nr:
- IRFB38N20DPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Height | 16.51mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Height 16.51mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFB38N20DPBF
This MOSFET is designed for high efficiency and effective thermal management in varied applications. Its robust enhancement mode N-channel design allows for considerable continuous drain currents while ensuring low on-resistance. This component is well-suited for power management solutions, enhancing performance and dependability in numerous electronic environments.
Features & Benefits
• Supports a maximum continuous drain current of 43A
• Provides a low Rds(on) of 54mΩ to minimise energy loss
• Capable of withstanding drain-source voltages up to 200V
• High operating temperature tolerance ranging from -55°C to +175°C
• Designed for high-speed switching applications with low gate charge
• Integrates effectively into DC-DC converters and power supplies
Applications
• Utilised in high-frequency DC-DC converters for efficient power management
• Suitable for in plasma display panels
• Employed in industrial automation systems requiring consistent switching
• Used in power supplies where thermal efficiency is crucial
• Ideal for electronic designs needing high performance at elevated temperatures
What kind of currents can it handle in high-temperature applications?
It can manage up to 30A continuous drain current at 100°C, ensuring consistent performance under elevated temperatures.
How does this component perform in high-frequency applications?
It is explicitly designed for high-speed switching, featuring low gate charge and minimal delay times, making it appropriate for such applications.
What packaging options are available for this product?
It is available in a TO-220AB package, facilitating through-hole mounting for easy integration into electronic circuits.
Can this be used in conjunction with other power management devices?
Yes, it is frequently used alongside various DC-DC converters to enhance efficiency in power delivery systems.
What measures should be taken for installation?
Ensure proper thermal management is in place, including heatsinking, to maintain optimal junction temperatures during operation.
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IRFB3806PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI4410ZPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220 IRF3415PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
