Texas Instruments FemtoFET Type N-Channel MOSFET, 3.1 A, 30 V Enhancement, 3-Pin PICOSTAR
- RS-artikelnummer:
- 823-9240
- Tillv. art.nr:
- CSD17381F4T
- Tillverkare / varumärke:
- Texas Instruments
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
177,18 kr
(exkl. moms)
221,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 240 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 20 | 8,859 kr | 177,18 kr |
| 40 - 80 | 8,613 kr | 172,26 kr |
| 100 - 480 | 8,395 kr | 167,90 kr |
| 500 - 980 | 8,187 kr | 163,74 kr |
| 1000 + | 7,986 kr | 159,72 kr |
*vägledande pris
- RS-artikelnummer:
- 823-9240
- Tillv. art.nr:
- CSD17381F4T
- Tillverkare / varumärke:
- Texas Instruments
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PICOSTAR | |
| Series | FemtoFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.04nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 0.73V | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.64 mm | |
| Length | 1.04mm | |
| Height | 0.35mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PICOSTAR | ||
Series FemtoFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.04nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 0.73V | ||
Maximum Operating Temperature 150°C | ||
Width 0.64 mm | ||
Length 1.04mm | ||
Height 0.35mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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