Dual N/P-Channel-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC Diodes Inc ZXMC4559DN8TA

RS-artikelnummer:: 823-4059P
Tillv. art.nr:: ZXMC4559DN8TA
Tillverkare / varumärke:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC Diodes Inc ZXMC4559DN8TA

120 I lager för avsändande samma dag

Pris (ex. moms) Varje (levereras i en rulle) Mängder under 150 på kontinuerlig remsa

9,138 kr

(exkl. moms)

11,422 kr

(inkl. moms)

Enheter	Per enhet
260 +	9,138 kr

RS-artikelnummer:: 823-4059P
Tillv. art.nr:: ZXMC4559DN8TA
Tillverkare / varumärke:: DiodesZetex

Complementary 60v Enhancement Mode Mosfet Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.6 A, 4.7 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	75 mΩ, 125 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	4.95mm
Typical Gate Charge @ Vgs	20.4 nC @ 10 V, 24.2 nC @ 10 V
Number of Elements per Chip	2
Width	3.95mm
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC Diodes Inc ZXMC4559DN8TA

Dual N/P-Channel MOSFET, Diodes Inc.