Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

RS-artikelnummer:: 823-3211P
Tillv. art.nr:: DMHC3025LSD-13
Tillverkare / varumärke:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

24070 I lager för avsändande samma dag

Pris (ex. moms) Varje (levereras i en rulle) Mängder under 150 på kontinuerlig remsa

3,882 kr

(exkl. moms)

4,852 kr

(inkl. moms)

Enheter	Per enhet
10 +	3,882 kr

RS-artikelnummer:: 823-3211P
Tillv. art.nr:: DMHC3025LSD-13
Tillverkare / varumärke:: DiodesZetex

30v Complementary Enhancement Mode Mosfet H-Bridge Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.5 A, 7.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	40 mΩ, 80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	4.95mm
Typical Gate Charge @ Vgs	11.4 nC @ 10 V, 11.7 nC @ 10 V
Number of Elements per Chip	4
Transistor Material	Si
Width	3.95mm
Height	1.5mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.