Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS-artikelnummer:: 822-2532P
Tillv. art.nr:: DMG6602SVT-7
Tillverkare / varumärke:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

76700 I lager för avsändande samma dag

Pris (ex. moms) Varje (levereras i en rulle) Mängder under 150 på kontinuerlig remsa

2,891 kr

(exkl. moms)

3,614 kr

(inkl. moms)

Enheter	Per enhet
100 +	2,891 kr

RS-artikelnummer:: 822-2532P
Tillv. art.nr:: DMG6602SVT-7
Tillverkare / varumärke:: DiodesZetex

DMG6602SVT-7 Complementary Pair Enhancement MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Width	1.6mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.9mm

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.