SQD19P06-60L_GE3 P-Channel MOSFET, 11 A, 60 V SQ Rugged, 3-Pin DPAK Vishay

  • RS-artikelnummer 819-3936
  • Tillv. art.nr SQD19P06-60L_GE3
  • Tillverkare / varumärke Vishay
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): TW
Produktdetaljer

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifikationer
Attribute Value
Channel Type P
Maximum Continuous Drain Current 11 A
Maximum Drain Source Voltage 60 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 125 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 46 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 2.38mm
Width 6.22mm
Length 6.73mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Series SQ Rugged
Transistor Material Si
Typical Gate Charge @ Vgs 27 nC @ 10 V
330 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 10)
11,012 kr
(exkl. moms)
13,765 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
10 +
11,012 kr
110,12 kr
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