Vishay Si5418DU Type N-Channel MOSFET, 11.6 A, 30 V Enhancement, 8-Pin PowerPAK ChipFET SI5418DU-T1-GE3
- RS-artikelnummer:
- 818-1318
- Tillv. art.nr:
- SI5418DU-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
164,20 kr
(exkl. moms)
205,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 17 augusti 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 80 | 8,21 kr | 164,20 kr |
| 100 - 180 | 8,042 kr | 160,84 kr |
| 200 - 480 | 6,563 kr | 131,26 kr |
| 500 - 980 | 6,407 kr | 128,14 kr |
| 1000 + | 5,169 kr | 103,38 kr |
*vägledande pris
- RS-artikelnummer:
- 818-1318
- Tillv. art.nr:
- SI5418DU-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK ChipFET | |
| Series | Si5418DU | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Standards/Approvals | No | |
| Width | 1.98 mm | |
| Length | 3.08mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK ChipFET | ||
Series Si5418DU | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Standards/Approvals No | ||
Width 1.98 mm | ||
Length 3.08mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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