Vishay IRFL Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 4-Pin SOT-223 IRFL014TRPBF
- RS-artikelnummer:
- 815-2733
- Tillv. art.nr:
- IRFL014TRPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
132,62 kr
(exkl. moms)
165,78 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 420 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 20 | 6,631 kr | 132,62 kr |
| 40 - 80 | 5,305 kr | 106,10 kr |
| 100 - 180 | 4,646 kr | 92,92 kr |
| 200 - 480 | 4,315 kr | 86,30 kr |
| 500 + | 3,58 kr | 71,60 kr |
*vägledande pris
- RS-artikelnummer:
- 815-2733
- Tillv. art.nr:
- IRFL014TRPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFL | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7 mm | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFL | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7 mm | ||
Height 1.8mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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