Vishay IRLR Type N-Channel MOSFET, 7.7 A, 60 V Enhancement, 3-Pin TO-252 IRLR014TRPBF
- RS-artikelnummer:
- 813-0718
- Tillv. art.nr:
- IRLR014TRPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
102,14 kr
(exkl. moms)
127,68 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 460 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 10,214 kr | 102,14 kr |
| 100 - 240 | 9,699 kr | 96,99 kr |
| 250 - 490 | 8,176 kr | 81,76 kr |
| 500 - 990 | 7,672 kr | 76,72 kr |
| 1000 + | 7,134 kr | 71,34 kr |
*vägledande pris
- RS-artikelnummer:
- 813-0718
- Tillv. art.nr:
- IRLR014TRPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | IRLR | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 25W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.38mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series IRLR | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 25W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.38mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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