Vishay IRFR Type N-Channel Power MOSFET, 2.6 A, 200 V Enhancement, 3-Pin TO-252 IRFR210TRPBF
- RS-artikelnummer:
- 812-0616
- Tillv. art.nr:
- IRFR210TRPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
77,39 kr
(exkl. moms)
96,74 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 01 december 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,739 kr | 77,39 kr |
| 100 - 240 | 6,978 kr | 69,78 kr |
| 250 - 490 | 6,429 kr | 64,29 kr |
| 500 - 990 | 6,048 kr | 60,48 kr |
| 1000 + | 5,029 kr | 50,29 kr |
*vägledande pris
- RS-artikelnummer:
- 812-0616
- Tillv. art.nr:
- IRFR210TRPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRFR | |
| Package Type | TO-252 | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRFR | ||
Package Type TO-252 | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.38mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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