onsemi PowerTrench Type P-Channel PowerTrench MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 FDD4141
- RS-artikelnummer:
- 809-0880
- Tillv. art.nr:
- FDD4141
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
92,51 kr
(exkl. moms)
115,64 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 850 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 9,251 kr | 92,51 kr |
| 100 - 240 | 7,974 kr | 79,74 kr |
| 250 - 490 | 6,91 kr | 69,10 kr |
| 500 - 990 | 6,07 kr | 60,70 kr |
| 1000 + | 5,522 kr | 55,22 kr |
*vägledande pris
- RS-artikelnummer:
- 809-0880
- Tillv. art.nr:
- FDD4141
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | PowerTrench MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Standards/Approvals | RoHS | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type PowerTrench MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Standards/Approvals RoHS | ||
Length 6.73mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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