onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 4.7 A, 80 V Enhancement, 8-Pin SOIC FDS3890

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5 - 526,028 kr130,14 kr
10 - 9520,988 kr104,94 kr
100 - 24517,114 kr85,57 kr
250 - 49516,62 kr83,10 kr
500 +14,112 kr70,56 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
806-3630
Tillv. art.nr:
FDS3890
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

80V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

82mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.74V

Maximum Operating Temperature

175°C

Transistor Configuration

Isolated

Height

1.575mm

Standards/Approvals

No

Width

3.9 mm

Length

4.9mm

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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