onsemi PowerTrench Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 FDB035N10A
- RS-artikelnummer:
- 802-3200
- Tillv. art.nr:
- FDB035N10A
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
144,48 kr
(exkl. moms)
180,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 52 enhet(er) från den 29 december 2025
- Dessutom levereras 200 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 72,24 kr | 144,48 kr |
| 20 - 198 | 62,27 kr | 124,54 kr |
| 200 + | 53,985 kr | 107,97 kr |
*vägledande pris
- RS-artikelnummer:
- 802-3200
- Tillv. art.nr:
- FDB035N10A
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | PowerTrench | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series PowerTrench | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 FDB088N08
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 80 V Enhancement, 7-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263