Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6
- RS-artikelnummer:
- 787-9055P
- Tillv. art.nr:
- SI1029X-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal 200 enheter (levereras i en rulle)*
939,80 kr
(exkl. moms)
1 174,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 560 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 200 - 480 | 4,699 kr |
| 500 - 980 | 4,256 kr |
| 1000 - 1980 | 4,004 kr |
| 2000 + | 3,752 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9055P
- Tillv. art.nr:
- SI1029X-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SC-89-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 750nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.6mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SC-89-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 750nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 0.6mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||