onsemi PowerTrench Type P-Channel MOSFET, 5.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC604P

RS-artikelnummer:: 761-3524
Tillv. art.nr:: FDC604P
Tillverkare / varumärke:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 5.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC604P

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

43,37 kr

(exkl. moms)

54,21 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

8 350 enhet(er) levereras från den 02 januari 2026

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Enheter	Per enhet	Per förpackning*
10 - 90	4,337 kr	43,37 kr
100 - 240	3,725 kr	37,25 kr
250 - 490	3,235 kr	32,35 kr
500 - 990	2,849 kr	28,49 kr
1000 +	2,589 kr	25,89 kr

*vägledande pris

RS-artikelnummer:: 761-3524
Tillv. art.nr:: FDC604P
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.5A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	1.6W
	Maximum Operating Temperature	150°C
	Length	3mm
	Height	1mm
	Standards/Approvals	No
	Width	1.7 mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.5A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SOT-23
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 1.6W
	Maximum Operating Temperature 150°C
	Length 3mm
	Height 1mm
	Standards/Approvals No
	Width 1.7 mm
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi PowerTrench Type P-Channel MOSFET, 5.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC604P

GRATIS leverans för online beställningar över 500,00 kr

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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