STMicroelectronics MDmesh Type N-Channel MOSFET, 5 A, 600 V Enhancement, 3-Pin TO-220
- RS-artikelnummer:
- 761-2843
- Tillv. art.nr:
- STF7NM60N
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
65,07 kr
(exkl. moms)
81,34 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 24 april 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 13,014 kr | 65,07 kr |
| 10 - 95 | 10,998 kr | 54,99 kr |
| 100 - 495 | 8,58 kr | 42,90 kr |
| 500 - 995 | 7,28 kr | 36,40 kr |
| 1000 + | 6,07 kr | 30,35 kr |
*vägledande pris
- RS-artikelnummer:
- 761-2843
- Tillv. art.nr:
- STF7NM60N
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | MDmesh | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 20W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Height | 16.4mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series MDmesh | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 20W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Height 16.4mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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