STMicroelectronics Type N-Channel MOSFET, 11 A, 900 V Enhancement, 3-Pin TO-247 STW12NK90Z
- RS-artikelnummer:
- 761-0617
- Tillv. art.nr:
- STW12NK90Z
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 enhet)*
61,82 kr
(exkl. moms)
77,28 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 105 enhet(er) från den 29 december 2025
- Dessutom levereras 632 enhet(er) från den 05 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 61,82 kr |
| 10 - 99 | 52,64 kr |
| 100 - 499 | 42,45 kr |
| 500 - 999 | 37,52 kr |
| 1000 + | 31,81 kr |
*vägledande pris
- RS-artikelnummer:
- 761-0617
- Tillv. art.nr:
- STW12NK90Z
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 880mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Power Dissipation Pd | 230W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15 mm | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Distrelec Product Id | 301-70-885 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 880mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Power Dissipation Pd 230W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.15 mm | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Distrelec Product Id 301-70-885 | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
relaterade länkar
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247 STW15NK90Z
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247 STW11NK90Z
- STMicroelectronics Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247 STW9NK90Z