onsemi PowerTrench Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin SOIC FDS86242
- RS-artikelnummer:
- 759-9692
- Tillv. art.nr:
- FDS86242
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
24,42 kr
(exkl. moms)
30,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 11 maj 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 12,21 kr | 24,42 kr |
| 20 - 198 | 10,53 kr | 21,06 kr |
| 200 - 998 | 9,13 kr | 18,26 kr |
| 1000 + | 8,065 kr | 16,13 kr |
*vägledande pris
- RS-artikelnummer:
- 759-9692
- Tillv. art.nr:
- FDS86242
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 126mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.81V | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 8.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Length | 4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 126mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.81V | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 8.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Length 4mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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