Quad N/P-Channel-Channel MOSFET, 1 A, 850 mA, 100 V, 8-Pin SOIC Diodes Inc ZXMHC10A07N8TC

RS-artikelnummer:: 751-5332P
Tillv. art.nr:: ZXMHC10A07N8TC
Tillverkare / varumärke:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 1 A, 850 mA, 100 V, 8-Pin SOIC Diodes Inc ZXMHC10A07N8TC

Tillfälligt slut i lager – restorder för leverans 2025-07-09

Pris (ex. moms) Varje (levereras i en rulle) Mängder under 150 på kontinuerlig remsa

10,98 kr

(exkl. moms)

13,72 kr

(inkl. moms)

Enheter	Per enhet
50 +	10,98 kr

RS-artikelnummer:: 751-5332P
Tillv. art.nr:: ZXMHC10A07N8TC
Tillverkare / varumärke:: DiodesZetex

100V SO8 Complementary Enhancement Mode MOSFET H-Bridge
Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1 A, 850 mA
Maximum Drain Source Voltage	100 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	1.45 Ω, 900 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	1.36 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	4
Width	4mm
Length	5mm
Transistor Material	Si
Typical Gate Charge @ Vgs	2.9 nC @ 10 V, 3.5 nC @ 50 V
Minimum Operating Temperature	-55 °C
Height	1.5mm

Quad N/P-Channel-Channel MOSFET, 1 A, 850 mA, 100 V, 8-Pin SOIC Diodes Inc ZXMHC10A07N8TC

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.