Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 60 V Enhancement, 3-Pin SOT-23 IRLML0060TRPBF
- RS-artikelnummer:
- 725-9341P
- Tillv. art.nr:
- IRLML0060TRPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal 200 enheter (levereras i en rulle)*
376,40 kr
(exkl. moms)
470,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 73 380 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 200 - 480 | 1,882 kr |
| 500 - 980 | 1,753 kr |
| 1000 - 1980 | 1,63 kr |
| 2000 + | 1,507 kr |
*vägledande pris
- RS-artikelnummer:
- 725-9341P
- Tillv. art.nr:
- IRLML0060TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 92mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.02mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 92mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.02mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.