Vishay IRLI Type N-Channel MOSFET, 9.9 A, 200 V Enhancement, 3-Pin TO-220 IRLI640GPBF
- RS-artikelnummer:
- 708-4872
- Tillv. art.nr:
- IRLI640GPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
152,54 kr
(exkl. moms)
190,675 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 375 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 30,508 kr | 152,54 kr |
| 25 - 45 | 25,94 kr | 129,70 kr |
| 50 - 120 | 24,416 kr | 122,08 kr |
| 125 - 245 | 22,87 kr | 114,35 kr |
| 250 + | 21,37 kr | 106,85 kr |
*vägledande pris
- RS-artikelnummer:
- 708-4872
- Tillv. art.nr:
- IRLI640GPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRLI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.8mm | |
| Standards/Approvals | No | |
| Height | 9.8mm | |
| Width | 10.3 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRLI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 150°C | ||
Length 4.8mm | ||
Standards/Approvals No | ||
Height 9.8mm | ||
Width 10.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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