Vishay IRFU Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin IPAK (TO-251)
- RS-artikelnummer:
- 708-4831
- Tillv. art.nr:
- IRFU110PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
76,38 kr
(exkl. moms)
95,48 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 3 000 enhet(er) levereras från den 05 mars 2027
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,638 kr | 76,38 kr |
| 100 - 240 | 6,899 kr | 68,99 kr |
| 250 - 490 | 6,339 kr | 63,39 kr |
| 500 - 990 | 5,97 kr | 59,70 kr |
| 1000 + | 4,973 kr | 49,73 kr |
*vägledande pris
- RS-artikelnummer:
- 708-4831
- Tillv. art.nr:
- IRFU110PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRFU | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.54Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.3nC | |
| Maximum Power Dissipation Pd | 25W | |
| Forward Voltage Vf | 100V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Width | 2.38 mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRFU | ||
Package Type IPAK (TO-251) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.54Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.3nC | ||
Maximum Power Dissipation Pd 25W | ||
Forward Voltage Vf 100V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Width 2.38 mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Height 6.22mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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